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US 12,713,603 B2Granted
Nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsGi Yong Chung, Ho Jin Kim, Young-Jin Kwon, Dong Seog Eun
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Abstract
A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.
Claims20
A nonvolatile memory device comprising:
- a substrate including a cell array region and an extension region;
- a plurality of gate electrodes stacked on the substrate, the plurality of gate electrodes comprising at least one first gate electrode and a plurality of second gate electrodes stacked on the at least one first gate electrode, the at least one first gate electrode including a first opening on the cell array region and a second opening on the extension region;
- a word line cutting region cutting the plurality of gate electrodes and extending in a first direction that is parallel with an upper surface of the substrate;
- and
- a plurality of channel structures passing through the plurality of gate electrodes.
2 more elements
A nonvolatile memory device comprising:
- a substrate;
- at least one first gate electrode including an opening on the substrate;
- a plurality of second gate electrodes stacked on the at least one first gate electrode and including convex portions having an outward curve extending toward the substrate;
- a first channel structure passing through the at least one first gate electrode and the plurality of second gate electrodes;
- and
- a second channel structure passing through the at least one first gate electrode and the plurality of second gate electrodes and spaced apart from the first channel structure in a first direction,
- wherein the convex portions of the plurality of second gate electrodes and the opening of the at least one first gate electrode are formed between the first channel structure and the second channel structure.
4 more elements
A nonvolatile memory device comprising:
- a substrate including a cell array region and an extension region;
- a mold structure including a plurality of gate electrodes and a plurality of insulating films alternately stacked on the substrate;
- and
- a plurality of channel structures passing through the mold structure,
- wherein the plurality of gate electrodes includes at least one first gate electrode and a plurality of second gate electrodes stacked on the at least one first gate electrode,
- wherein the at least one first gate electrode includes a first opening on the cell array region and a second opening on the extension region,
- wherein one of the plurality of insulating films is between the at least one first gate electrode and one of the plurality of second gate electrodes adjacent to the at least one first gate electrode to fill the first opening and the second opening, and
- wherein at least a portion of the first opening overlaps the second opening in a first direction that is parallel with an upper surface of the substrate.
5 more elements
Dependencies are inferred from the claim text.