Memory devices and operating methods thereof, memory systems, word line voltage control circuits
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYu WANG, Daesik Song
Life of this patent
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Abstract
The present disclosure provides memory devices, operating methods thereof, memory systems, and word line voltage control circuits. A disclosed memory device comprises an array of memory cells, a plurality of word lines coupled with the memory cells, and a peripheral circuit coupled to the memory cells through the word lines. The peripheral circuit is configured to reduce a first voltage on a non-selected word line adjacent to a selected word line to a second voltage, provide a pre-charge voltage to the selected word line, increase the second voltage on the non-selected word line to a third voltage, and float the selected word line.
Claims20
A memory device, comprising:
- an array of memory cells;
- and
- a peripheral circuit coupled to the memory cells through word lines and configured to:
- at a first time point, apply a pre-charge voltage to a selected word line of the word lines;
- and
- at a second time point before the first time point, reduce a voltage on at least one non-selected word line adjacent to the selected word line from a first voltage to a second voltage lower than the first voltage.
A memory system, comprising:
- at least one memory device comprising:
- an array of memory cells;
- and
- a peripheral circuit coupled to the memory cells through word lines and configured to:
- at a first time point, apply a pre-charge voltage to a selected word line of the word lines;
- and
- at a second time point before the first time point, reduce a voltage on at least one non-selected word line adjacent to the selected word line from a first voltage to a second voltage lower than the first voltage;
- and
- a memory controller configured to control the at least one memory device through the peripheral circuit.
A method for operating a memory device, comprising:
- at a first time point, applying a pre-charge voltage to a selected word line of word lines;
- and
- at a second time point before the first time point, reducing a voltage on at least one non-selected word line adjacent to the selected word line from a first voltage to a second voltage lower than the first voltage.
Dependencies are inferred from the claim text.