G11C 29/814
For optimized yield
Official title: {for optimized yield}
G11C29/814 (For optimized yield) appears on 52 US grants and 57 published applications in this corpus.
Search patents in G11C- Granted patents
- 52
- Published applications
- 57
- Assignees
- 30
- Inventors
- 106
- Latest grant
- 3 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 1 | 2 |
| 2003 | 1 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 2 |
| 2015 | 0 | 1 |
| 2016 | 0 | 1 |
| 2017 | 3 | 1 |
| 2018 | 2 | 4 |
| 2019 | 4 | 6 |
| 2020 | 8 | 7 |
| 2021 | 4 | 6 |
| 2022 | 4 | 11 |
| 2023 | 8 | 3 |
| 2024 | 8 | 3 |
| 2025 | 0 | 0 |
| 2026 | 2 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for LUT-free memory repair3 Mar 2026US 12,567,477 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device including repair circuit and operating method thereof6 Jan 2026US 12,518,848 B2Samsung Electronics Co., Ltd.
- Systems and methods for capture and replacement of hammered word line address12 Nov 2024US 12,142,313 B2
- Fuse logic to perform selectively enabled ecc decoding16 Jul 2024US 12,038,804 B2Micron Technology, Inc.
- Memory device for selectively operating multiple memory groups in different speeds and memory system including the same25 Jun 2024US 12,020,763 B2SK hynix Inc.
- Stacked die memory sparing device and method17 Sep 2026US 2026/0282847 A1Micron Technology, Inc.
- Method for lut-free memory repair27 Aug 2026US 2026/0253660 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory-paired system for multiple stacked semiconductor devices and repair method thereof25 Jun 2026US 2026/0179716 A1Nanya Technology Corporation
- Silicon Wafer-Scale System, Repair Method Thereof, and Electronic Device7 May 2026US 2026/0129998 A1Huawei Technologies Co., Ltd.
- Fuse logic to perform selectively enabled ecc decoding28 Nov 2024US 2024/0394142 A1Micron Technology, Inc.
Most cited
By later US patents
- Circuit and method for testing embedded DRAM circuits through direct access mode27US 7,171,596 B2Infineon Technologies AG · 2007
- Memory module, memory system including the same and operation method thereof13US 9,627,095 B1SK hynix Inc. · 2017
- Semiconductor memory6US 6,191,983 B1Hitachi, Ltd. · 2001
- Semiconductor memory device having improved redundancy scheme5US 6,870,780 B2Samsung Electronics Co., Ltd. · 2005
- Various methods and apparatuses for effective yield enhancement of good chip dies having memories per wafer5US 7,890,900 B2Synopsys, Inc. · 2011