Method for LUT-free memory repair

A method comprising:

• providing an array of memory cells in which each memory cell of the array has a first data state, a second data state, and a permanent state;
• and
• performing a read or write operation on a logical word allocated a set of memory cells, wherein the set of memory cells is in a first row of the array and includes only memory cells in the first data state and/or the second data state;
• wherein the array comprises a first memory cell in the permanent state, and a second memory cell in the first or second data state, during the read or write operation, wherein the first memory cell is between a pair of memory cells of the set of memory cells and is in the first row, and wherein the second memory cell is in a second row of the array and is in a same column of the array as the first memory cell.

A method comprising:

• providing an array of memory cells in which each memory cell of the array has a first data state, a second data state, and a permanent state;
• reading a physical word formed by a set of memory cells in a first row of the array, wherein the reading generates a read current through a memory cell of the set of memory cells;
• comparing the read current of the memory cell concurrently to a permanent-state threshold and a data-state threshold to determine whether the memory cell is in the permanent state and to further determine whether the memory cell is in the first or second data state when not in the permanent state;
• and
• performing a read or write operation on a logical word formed by a subset of the set of memory cells, which is different depending on whether the memory cell is determined to be in the permanent state.