G11C 16/10
Programming or data input circuits
G11C16/10 (Programming or data input circuits) appears on 16,290 US grants and 15,523 published applications in this corpus.
Search patents in G11C- Granted patents
- 16,290
- Published applications
- 15,523
- Assignees
- 1,197
- Inventors
- 11,875
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 8 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 10 | 0 |
| 1982 | 8 | 0 |
| 1983 | 10 | 0 |
| 1984 | 11 | 0 |
| 1985 | 13 | 0 |
| 1986 | 19 | 0 |
| 1987 | 25 | 0 |
| 1988 | 37 | 0 |
| 1989 | 41 | 0 |
| 1990 | 34 | 0 |
| 1991 | 56 | 0 |
| 1992 | 41 | 0 |
| 1993 | 59 | 0 |
| 1994 | 107 | 0 |
| 1995 | 107 | 0 |
| 1996 | 144 | 0 |
| 1997 | 143 | 0 |
| 1998 | 189 | 0 |
| 1999 | 228 | 0 |
| 2000 | 279 | 0 |
| 2001 | 243 | 89 |
| 2002 | 276 | 252 |
| 2003 | 277 | 272 |
| 2004 | 239 | 310 |
| 2005 | 273 | 408 |
| 2006 | 341 | 457 |
| 2007 | 395 | 501 |
| 2008 | 398 | 528 |
| 2009 | 401 | 491 |
| 2010 | 398 | 431 |
| 2011 | 493 | 483 |
| 2012 | 415 | 509 |
| 2013 | 514 | 517 |
| 2014 | 649 | 651 |
| 2015 | 699 | 651 |
| 2016 | 884 | 784 |
| 2017 | 778 | 667 |
| 2018 | 687 | 651 |
| 2019 | 762 | 839 |
| 2020 | 917 | 934 |
| 2021 | 909 | 952 |
| 2022 | 878 | 1028 |
| 2023 | 860 | 937 |
| 2024 | 863 | 889 |
| 2025 | 715 | 700 |
| 2026 | 448 | 592 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Semiconductor memory devices with dielectric fin structures6 Oct 2026US 12,755,790 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Re-driving data to a sub-block during programming of multiple sub-blocks6 Oct 2026US 12,755,791 B2Micron Technology, Inc.
- Using non-segregated cells as drain-side select gates for sub-blocks in a memory device6 Oct 2026US 12,755,792 B2Micron Technology, Inc.
- Memory array and methods of operation6 Oct 2026US 12,755,793 B2Microchip Technology Incorporated
- Nonvolatile memory device supporting high-efficiency i/o interface8 Oct 2026US 2026/0310383 A1Samsung Electronics Co., Ltd.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Lateral charge migration handling on edge wordlines of a memory device in a memory sub-system8 Oct 2026US 2026/0311764 A1Micron Technology, Inc.
- Semiconductor structure, method of operating thereof, and semiconductor device8 Oct 2026US 2026/0311765 A1Yangtze Memory Technologies Holding Co., Ltd.
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states791US 6,522,580 B2SanDisk Corporation · 2003
- Selective operation of a multi-state non-volatile memory system in a binary mode707US 6,456,528 B1SanDisk Corporation · 2002
- Nonvolatile memory device, operating method thereof and memory system including the same633US 8,559,235 B2Samsung Electronics Co., Ltd. · 2013