Re-driving data to a sub-block during programming of multiple sub-blocks
AssigneeMicron Technology, Inc.
InventorsEric N. Lee, Tomoko Ogura Iwasaki, Alessio Urbani, Justin Bates
Life of this patent
Estimating the term…
Abstract
A request to execute a programming operation to program multiple sub-blocks including a first sub-block and a second sub-block of a memory device is identified. A first drive operation is executed to load first data into a first select gate drain (SGD) associated with the first sub-block. Following completion of the first drive operation, a second drive operation is executed to load second data into a second SGD associated with the second sub-block. Following completion of the second drive operation, a third drive operation is executed to re-load the first data into the first SGD.
Claims11
A memory device comprising:
- a memory array;
- and
- control logic, operatively coupled with the memory array, the control logic configured to:
- identify a request to execute a programming operation to program a plurality of sub-blocks comprising a first sub-block and a second sub-block of a memory device;
- execute a first drive operation to load first data into a first select gate drain (SGD) associated with the first sub-block;
- following completion of the first drive operation, execute a second drive operation to load second data into a second SGD associated with the second sub-block;
- following completion of the second drive operation, execute a third drive operation to re-load the first data into the first SGD;
- and
- cause a ramped programmed pulse to be applied to a wordline associated with the first sub-block and the second sub-block, wherein the third drive operation is executed during application of the ramped programming pulse to the wordline.
A method comprising:
- identifying, by a processing device, a request to execute a programming operation to program a plurality of sub-blocks comprising a first sub-block and a second sub-block of a memory device;
- executing a first drive operation to load first data into a first select gate drain (SGD) associated with the first sub-block;
- following completion of the first drive operation, execute a second drive operation to load second data into a second SGD associated with the second sub-block;
- following completion of the second drive operation, execute a third drive operation to re-load the first data into the first SGD;
- and
- cause a ramped programmed pulse to be applied to a wordline associated with the first sub-block and the second sub-block, wherein the third drive operation is executed during application of the ramped programming pulse to the wordline.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- identifying a request to execute a programming operation to program a plurality of sub-blocks comprising a first sub-block and a second sub-block of a memory device;
- executing a first drive operation to load first data into a first select gate drain (SGD) associated with the first sub-block;
- following completion of the first drive operation, execute a second drive operation to load second data into a second SGD associated with the second sub-block;
- following completion of the second drive operation, execute a third drive operation to re-load the first data into the first SGD;
- and
- cause a ramped programmed pulse to be applied to a wordline associated with the first sub-block and the second sub-block, wherein the third drive operation is executed during application of the ramped programming pulse to the wordline.
Dependencies are inferred from the claim text.