Lateral charge migration handling on edge wordlines of a memory device in a memory sub-system

A method comprising:

• identifying first data associated with a first wordline of a memory device, wherein the first wordline is a data wordline at an edge of a data block of the memory device;
• identifying a second wordline adjacent to the first wordline, wherein the second wordline is a dummy wordline;
• generating second data based on the first data, wherein the second data is associated with a second voltage characteristic corresponding to a first voltage characteristic associated with the first data;
• and
• programming the second data on the second wordline.

A non-transitory computer-readable medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations further comprising:

• identifying first data associated with a first wordline of a memory device, wherein the first wordline is a data wordline at an edge of a data block of the memory device;
• identifying a second wordline adjacent to the first wordline, wherein the second wordline is a dummy wordline;
• generating second data based on the first data, wherein the second data is associated with a second voltage characteristic corresponding to a first voltage characteristic associated with the first data;
• and
• programming the second data on the second wordline.