G11C 16/12
Programming voltage switching circuits
G11C16/12 (Programming voltage switching circuits) appears on 2,195 US grants and 1,816 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,195
- Published applications
- 1,816
- Assignees
- 303
- Inventors
- 2,250
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 8 | 0 |
| 1987 | 10 | 0 |
| 1988 | 7 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 13 | 0 |
| 1992 | 5 | 0 |
| 1993 | 11 | 0 |
| 1994 | 27 | 0 |
| 1995 | 18 | 0 |
| 1996 | 31 | 0 |
| 1997 | 19 | 0 |
| 1998 | 41 | 0 |
| 1999 | 51 | 0 |
| 2000 | 59 | 0 |
| 2001 | 60 | 25 |
| 2002 | 88 | 70 |
| 2003 | 70 | 74 |
| 2004 | 62 | 62 |
| 2005 | 57 | 81 |
| 2006 | 79 | 121 |
| 2007 | 109 | 154 |
| 2008 | 130 | 120 |
| 2009 | 112 | 76 |
| 2010 | 71 | 44 |
| 2011 | 64 | 50 |
| 2012 | 45 | 51 |
| 2013 | 52 | 53 |
| 2014 | 83 | 83 |
| 2015 | 85 | 86 |
| 2016 | 107 | 91 |
| 2017 | 84 | 63 |
| 2018 | 65 | 61 |
| 2019 | 75 | 68 |
| 2020 | 77 | 83 |
| 2021 | 84 | 85 |
| 2022 | 57 | 44 |
| 2023 | 35 | 38 |
| 2024 | 34 | 59 |
| 2025 | 55 | 43 |
| 2026 | 30 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory, operation method thereof, and memory system6 Oct 2026US 12,755,801 B2Yangtze Memory Technologies Co., Ltd.
- Memory device and method of performing program operation1 Sep 2026US 12,725,658 B2SK hynix Inc.
- Writing method, reading method and memory device for hiding data1 Sep 2026US 12,725,660 B2Macronix International Co., Ltd.
- Data compression25 Aug 2026US 12,717,475 B2Samsung Electronics Co., Ltd.
- Memory device with sub-arrays and selection switches for reducing bit line interference25 Aug 2026US 12,718,852 B2Rohm Co., Ltd.
- Drift compensation for codewords in memory8 Oct 2026US 2026/0311767 A1Micron Technology, Inc.
- Wordline pass through voltage management during a programming operation1 Oct 2026US 2026/0301818 A1Micron Technology, Inc.
- Semiconductor device1 Oct 2026US 2026/0301827 A1Kioxia Corporation
- Semiconductor memory device, memory system, and control method1 Oct 2026US 2026/0301828 A1Kioxia Corporation
- Semiconductor memory device24 Sep 2026US 2026/0290456 A1Kioxia Corporation
Most cited
By later US patents
- Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states791US 6,522,580 B2SanDisk Corporation · 2003
- Selective operation of a multi-state non-volatile memory system in a binary mode707US 6,456,528 B1SanDisk Corporation · 2002
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Programming method to reduce gate coupling interference for non-volatile memory460US 7,400,532 B2Micron Technology, Inc. · 2008
- Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell325US 6,643,188 B2Kabushiki Kaisha Toshiba · 2003