G11C 16/107
Programming all cells in an array, sector or block to the same
Official title: {Programming all cells in an array, sector or block to the same state prior to flash erasing}
G11C16/107 (Programming all cells in an array, sector or block to the same) appears on 247 US grants and 229 published applications in this corpus.
Search patents in G11C- Granted patents
- 247
- Published applications
- 229
- Assignees
- 73
- Inventors
- 397
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 1 |
| 2002 | 7 | 6 |
| 2003 | 8 | 12 |
| 2004 | 5 | 5 |
| 2005 | 7 | 3 |
| 2006 | 7 | 8 |
| 2007 | 3 | 3 |
| 2008 | 2 | 4 |
| 2009 | 4 | 4 |
| 2010 | 3 | 5 |
| 2011 | 7 | 7 |
| 2012 | 6 | 3 |
| 2013 | 4 | 8 |
| 2014 | 12 | 19 |
| 2015 | 20 | 25 |
| 2016 | 20 | 14 |
| 2017 | 13 | 5 |
| 2018 | 12 | 13 |
| 2019 | 11 | 9 |
| 2020 | 17 | 18 |
| 2021 | 19 | 18 |
| 2022 | 16 | 17 |
| 2023 | 9 | 6 |
| 2024 | 6 | 5 |
| 2025 | 4 | 7 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Program operations in memory devices23 Jun 2026US 12,665,031 B2Yangtze Memory Technologies Co., Ltd.
- Programming selective word lines during an erase operation in a memory device19 May 2026US 12,632,180 B2Micron Technology, Inc.
- Nonvolatile memory devices and methods of controlling wordline erase operations within sub-blocks of memory strings12 May 2026US 12,626,765 B2Samsung Electronics Co., Ltd.
- Non-volatile memory with concurrent programming24 Feb 2026US 12,562,232 B2SanDisk Technologies LLC
- Method and non-transitory computer-readable storage medium and apparatus for executing host commands20 Jan 2026US 12,531,125 B2Silicon Motion, Inc.
- Program operations in memory devices1 Oct 2026US 2026/0301820 A1Yangtze Memory Technologies Co., Ltd.
- Semiconductor memory device and method12 Mar 2026US 2026/0073993 A1
- Semiconductor memory device12 Feb 2026US 2026/0045305 A1SK hynix Inc.
- Memory controller, memory device and storage device22 Jan 2026US 2026/0024586 A1Samsung Electronics Co., Ltd.
- Program operations in memory devices27 Nov 2025US 2025/0364052 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks412US 6,426,893 B1SanDisk Corporation · 2002
- Cross page management to avoid NAND physical page size limitation185US 9,159,422 B1SK hynix memory solutions inc. · 2015
- Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks53US 6,760,255 B2SanDisk Corporation · 2004
- Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory device52US 5,963,476 AMacronix International Co., Ltd. · 1999
- Method and integrated circuit for bit line soft programming (BLISP)49US 6,496,417 B1Macronix International Co., Ltd. · 2002