G11C 16/14
Circuits for erasing electrically
Official title: Circuits for erasing electrically, e.g. erase voltage switching circuits
G11C16/14 (Circuits for erasing electrically) appears on 5,155 US grants and 4,691 published applications in this corpus.
Search patents in G11C- Granted patents
- 5,155
- Published applications
- 4,691
- Assignees
- 525
- Inventors
- 4,989
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 7 | 0 |
| 1989 | 10 | 0 |
| 1990 | 12 | 0 |
| 1991 | 15 | 0 |
| 1992 | 15 | 0 |
| 1993 | 24 | 0 |
| 1994 | 44 | 0 |
| 1995 | 58 | 0 |
| 1996 | 64 | 0 |
| 1997 | 69 | 0 |
| 1998 | 80 | 0 |
| 1999 | 100 | 0 |
| 2000 | 102 | 0 |
| 2001 | 82 | 29 |
| 2002 | 87 | 61 |
| 2003 | 79 | 89 |
| 2004 | 66 | 86 |
| 2005 | 61 | 82 |
| 2006 | 99 | 120 |
| 2007 | 98 | 104 |
| 2008 | 87 | 85 |
| 2009 | 68 | 91 |
| 2010 | 71 | 83 |
| 2011 | 98 | 95 |
| 2012 | 87 | 129 |
| 2013 | 100 | 117 |
| 2014 | 160 | 185 |
| 2015 | 202 | 228 |
| 2016 | 322 | 302 |
| 2017 | 305 | 279 |
| 2018 | 266 | 239 |
| 2019 | 278 | 309 |
| 2020 | 348 | 363 |
| 2021 | 335 | 336 |
| 2022 | 300 | 323 |
| 2023 | 284 | 311 |
| 2024 | 275 | 254 |
| 2025 | 227 | 212 |
| 2026 | 141 | 179 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory array and methods of operation6 Oct 2026US 12,755,793 B2Microchip Technology Incorporated
- Architecture and method for NAND memory operation6 Oct 2026US 12,755,794 B2Yangtze Memory Technologies Co., Ltd.
- Sense voltage adjustment among multiple erase blocks6 Oct 2026US 12,755,795 B2Micron Technology, Inc.
- Erase method for memory device and memory device6 Oct 2026US 12,755,796 B2Macronix International Co., Ltd.
- Semiconductor memory device and operating method thereof29 Sep 2026US 12,749,545 B2SK hynix Inc.
- Nonvolatile memory device and method of operating the same8 Oct 2026US 2026/0311769 A1Samsung Electronics Co., Ltd.
- Storage device updating operation voltages based on a number of off cells and method of operating the same8 Oct 2026US 2026/0311770 A1Samsung Electronics Co., Ltd.
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Semiconductor memory device1 Oct 2026US 2026/0301812 A1Kioxia Corporation
- Flash memory device with improved charge retention characteristics and operation method thereof1 Oct 2026US 2026/0301821 A1Seoul National University R&Db Foundation
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Nonvolatile memory device, operating method thereof and memory system including the same633US 8,559,235 B2Samsung Electronics Co., Ltd. · 2013
- Memory management system and method627US 8,200,887 B2Violin Memory, Inc. · 2012
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013