Nonvolatile memory device and method of operating the same

A nonvolatile memory device, comprising:

• a memory cell array comprising a plurality of memory cells;
• and
• a plurality of peripheral circuits configured to:
• perform an erase operation to release a first set of electrons at a plurality of charge storage regions of the plurality of memory cells of the nonvolatile memory device;
• after performing the erase operation, perform, based on applying a back-tunneling voltage to a target wordline and a boosting voltage greater than the back-tunneling voltage to a neighboring wordline adjacent to the target wordline, a back-tunneling electron-injection operation to inject a second set of electrons into a spacer region between (i) a first charge storage region of the plurality of storage regions that corresponds to the target wordline and (ii) a second charge storage region of the plurality of storage regions that corresponds to the neighboring wordline;
• and
• after performing the back-tunneling electron-injection operation, perform a program operation to inject electrons into the first charge storage region.

A nonvolatile memory device comprising:

• a plurality of first metal pads at a cell region;
• a plurality of second metal pads at a peripheral region below the cell region, the peripheral region being vertically connected to the cell region based on the plurality of first metal pads and the plurality of second metal pads;
• a memory cell array in the cell region and comprising a plurality of memory cells;
• and
• a plurality of peripheral circuits at the peripheral region,
• wherein the plurality of peripheral circuits are configured to:
• perform an erase operation to release a first set of electrons at a plurality of charge storage regions of the plurality of memory cells of the nonvolatile memory device,
• after performing the erase operation, perform, based on applying a back-tunneling voltage to a target wordline and a boosting voltage greater than the back-tunneling voltage to a neighboring wordline adjacent to the target wordline, back-tunneling electron-injection operation to inject a second set of electrons of the electrons into a spacer region between (i) a first charge storage region of the plurality of charge storage regions that corresponds to the target wordline and (ii) a second charge storage region of the plurality of charge storage regions that corresponds to the neighboring wordline, and
• after performing the back-tunneling electron-injection operation, perform a program operation to inject electrons into the first charge storage region.