G11C 11/5635
Erasing circuits
Official title: {Erasing circuits}
G11C11/5635 (Erasing circuits) appears on 1,147 US grants and 959 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,147
- Published applications
- 959
- Assignees
- 165
- Inventors
- 1,194
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 8 | 0 |
| 1995 | 10 | 0 |
| 1996 | 13 | 0 |
| 1997 | 18 | 0 |
| 1998 | 43 | 0 |
| 1999 | 35 | 0 |
| 2000 | 37 | 0 |
| 2001 | 34 | 8 |
| 2002 | 22 | 24 |
| 2003 | 21 | 31 |
| 2004 | 15 | 28 |
| 2005 | 25 | 19 |
| 2006 | 15 | 19 |
| 2007 | 18 | 12 |
| 2008 | 26 | 17 |
| 2009 | 14 | 19 |
| 2010 | 17 | 18 |
| 2011 | 25 | 22 |
| 2012 | 21 | 27 |
| 2013 | 28 | 22 |
| 2014 | 24 | 39 |
| 2015 | 42 | 36 |
| 2016 | 55 | 55 |
| 2017 | 51 | 39 |
| 2018 | 47 | 50 |
| 2019 | 62 | 75 |
| 2020 | 79 | 80 |
| 2021 | 83 | 63 |
| 2022 | 49 | 56 |
| 2023 | 66 | 60 |
| 2024 | 52 | 63 |
| 2025 | 48 | 39 |
| 2026 | 25 | 38 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lifetime mixed level non-volatile memory system8 Sep 2026US 12,731,638 B2Vervain, LLC
- Flash memory for reducing reliability degradation of OS data due to SMT process and method for operating the same25 Aug 2026US 12,717,494 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device transitioning to standby mode in between two operations25 Aug 2026US 12,718,871 B2Kioxia Corporation
- Defect detection during erase operations18 Aug 2026US 12,712,041 B2Micron Technology, Inc.
- Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system11 Aug 2026US 12,706,141 B2Micron Technology, Inc.
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Supplying high voltage to local select gates in memory devices6 Aug 2026US 2026/0229287 A1Micron Technology, Inc.
- Sub-block mode erase techniques in a memory device6 Aug 2026US 2026/0229291 A1SanDisk Technologies LLC
- First erase verify high peak current consumption solution6 Aug 2026US 2026/0229298 A1SanDisk Technologies LLC
- Semiconductor storage device30 Jul 2026US 2026/0221204 A1Kioxia Corporation
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Semiconductor device and memory system940US 6,046,935 AKabushiki Kaisha Toshiba · 2000
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998