First erase verify high peak current consumption solution
AssigneeSanDisk Technologies LLC
InventorsZhenni Wan, Xiangying Deng, Heguang Li, Bo Lei
Life of this patent
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AssigneeSanDisk Technologies LLC
InventorsZhenni Wan, Xiangying Deng, Heguang Li, Bo Lei
Estimating the term…
A memory apparatus includes memory cells connected to word lines and disposed in memory holes. Each of the memory holes defines a channel. A control means is configured to apply an erase voltage pulse to the channel of the memory holes including the memory cells being erased in each of a plurality of erase pulse phases of an erase operation followed by an erase verify pulse applied to ones of the word lines connected to the memory cells being erased to verify the memory cells are erased in each of a plurality of erase verify phases of the erase operation. The control means discharges the channel of the memory holes after each of the plurality of erase pulse phases and before each of the plurality of erase verify phases in each of a plurality of channel clean phases of the erase operation.
A memory apparatus, comprising:
A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in memory holes and configured to retain a threshold voltage corresponding to one of a plurality of data states, each of the memory holes defining a channel, the controller configured to:
A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in memory holes and configured to retain a threshold voltage corresponding to one of a plurality of data states, each of the memory holes defining a channel, the method comprising the steps of:
Dependencies are inferred from the claim text.