G11C 11/5628
Programming or writing circuits
Official title: {Programming or writing circuits; Data input circuits}
G11C11/5628 (Programming or writing circuits) appears on 6,231 US grants and 6,237 published applications in this corpus.
Search patents in G11C- Granted patents
- 6,231
- Published applications
- 6,237
- Assignees
- 400
- Inventors
- 4,493
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 8 | 0 |
| 1994 | 9 | 0 |
| 1995 | 17 | 0 |
| 1996 | 24 | 0 |
| 1997 | 33 | 0 |
| 1998 | 82 | 0 |
| 1999 | 79 | 0 |
| 2000 | 96 | 0 |
| 2001 | 85 | 27 |
| 2002 | 72 | 65 |
| 2003 | 64 | 81 |
| 2004 | 62 | 84 |
| 2005 | 68 | 93 |
| 2006 | 76 | 92 |
| 2007 | 91 | 159 |
| 2008 | 146 | 255 |
| 2009 | 190 | 244 |
| 2010 | 184 | 251 |
| 2011 | 243 | 252 |
| 2012 | 268 | 250 |
| 2013 | 261 | 247 |
| 2014 | 295 | 250 |
| 2015 | 283 | 256 |
| 2016 | 333 | 288 |
| 2017 | 282 | 219 |
| 2018 | 248 | 216 |
| 2019 | 280 | 350 |
| 2020 | 364 | 408 |
| 2021 | 415 | 386 |
| 2022 | 329 | 387 |
| 2023 | 356 | 409 |
| 2024 | 382 | 423 |
| 2025 | 331 | 300 |
| 2026 | 161 | 245 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of controlling a semiconductor memory including memory cells and a word line6 Oct 2026US 12,755,800 B2Kioxia Corporation
- Memory devices including tri-state memory cells22 Sep 2026US 12,744,082 B2Micron Technology, Inc.
- Nonvolatile memory15 Sep 2026US 12,738,316 B2Kioxia Corporation
- Memory system performing read operation using read voltage15 Sep 2026US 12,738,324 B2Kioxia Corporation
- Lifetime mixed level non-volatile memory system8 Sep 2026US 12,731,638 B2Vervain, LLC
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Selective use of a word line monitoring procedure for reliability-risk word lines8 Oct 2026US 2026/0311782 A1Micron Technology, Inc.
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Extending the stop fine mode for improving performance and power by reducing verify and scan operations24 Sep 2026US 2026/0290448 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Multi-state EEPROM having write-verify control circuit972US 5,570,315 AKabushiki Kaisha Toshiba · 1996
- Semiconductor device and memory system940US 6,046,935 AKabushiki Kaisha Toshiba · 2000
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992