Memory system performing read operation using read voltage
AssigneeKioxia Corporation
InventorHiroyuki Nagashima
Life of this patent
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Abstract
According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to change a read level of the memory cell. The control unit controls write, read, and erase of the nonvolatile semiconductor memory device. The control unit changes the read level between a start of use of the nonvolatile semiconductor memory device and a timing after an elapse of a time.
Claims20
A memory system comprising:
- a nonvolatile semiconductor memory device including a plurality of memory cells, and
- a control circuit configured to:
- send a first command, to the nonvolatile semiconductor memory device, to read data stored in the memory cells using a first voltage corresponding to a voltage between a first threshold voltage and a second threshold voltage, and
- send a second command, to the nonvolatile semiconductor memory device, to read the data using a second voltage that is lower than the first voltage and corresponding to the voltage between the first threshold voltage and the second threshold voltage, after a first time has elapsed from a previous access to the memory cells.
A memory system comprising:
- a nonvolatile semiconductor memory device including a plurality of memory cells, and
- a control circuit configured to:
- send a first command, to the nonvolatile semiconductor memory device, to read data stored in the memory cells using a first voltage corresponding to a voltage between a first threshold voltage and a second threshold voltage, and
- send a second command, to the nonvolatile semiconductor memory device, to read the data using a second voltage that is higher than the first voltage and corresponding to the voltage between the first threshold voltage and the second threshold voltage, after a first time has elapsed from a previous access to the memory cells.
Dependencies are inferred from the claim text.