Flash memory for reducing reliability degradation of OS data due to SMT process and method for operating the same

A storage device for programming operating system (OS) data, comprising:

• a flash memory comprising a plurality of memory cells coupled to a plurality of word lines comprising a first word line and a second word line, wherein the first word line is adjacent to the second word line, coupled to first memory cells of the plurality of memory cells, and configured to be programmed with the OS data, wherein the second word line is coupled to second memory cells of the plurality of memory cells and has a first threshold voltage corresponding to a first programming state from among one or more programming states and is configured to be programmed in a specific state pattern corresponding to the first programming state higher than a specific program verify voltage, wherein the one or more programming states correspond to respective threshold voltages, and wherein the specific state pattern is configured to reduce an effect of lateral charge loss;
• and
• a memory controller configured to:
• enable, based on receiving a command from a host and before exposing to a high-temperature environment process, a read-only memory (ROM) burst mode of the flash memory configured to store the OS data in the flash memory before performing the high-temperature environment process,
• control, before the high-temperature environment process and the ROM burst mode being enabled, the flash memory to program the OS data with a multi-bit program to the first memory cells, and to program the second memory cells to the specific state pattern,
• change program ordering of the OS data and the specific state pattern before the high-temperature environment process, and
• disable, before the high-temperature environment process, the ROM burst mode.