Semiconductor storage device

A semiconductor storage device comprising:

• a first string including a plurality of memory cells, a first select transistor, and a second select transistor,
• wherein the plurality of memory cells in the first string include:
• a plurality of first memory cells in a first sub-block adjacent to the first select transistor;
• a plurality of second memory cells in a second sub-block adjacent to the second select transistor;
• and
• a first intermediate cell between the first sub-block and the second sub-block, and
• when a write operation is performed in which the first sub-block is set as a selected sub-block, the second sub-block is set as a non-selected sub-block, the first string is set as a non-selected string, and a second string different from the first string is set as a selected string, a first precharge on the first string is performed in a state where the first intermediate cell is turned off, the first select transistor is turned on, and the second select transistor is turned on.