G11C 11/2259
Cell access
Official title: {Cell access}
G11C11/2259 (Cell access) appears on 544 US grants and 600 published applications in this corpus.
Search patents in G11C- Granted patents
- 544
- Published applications
- 600
- Assignees
- 95
- Inventors
- 591
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 1 |
| 2014 | 2 | 2 |
| 2015 | 3 | 4 |
| 2016 | 4 | 3 |
| 2017 | 10 | 9 |
| 2018 | 28 | 36 |
| 2019 | 41 | 67 |
| 2020 | 59 | 75 |
| 2021 | 72 | 79 |
| 2022 | 79 | 79 |
| 2023 | 85 | 75 |
| 2024 | 69 | 71 |
| 2025 | 54 | 48 |
| 2026 | 34 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device and method for controlling semiconductor memory device15 Sep 2026US 12,738,308 B2Ramxeed Limited
- NOR-type memory device, method of manufacturing NOR-type memory device, and electronic apparatus including memory device8 Sep 2026US 12,733,174 B2Institute of Microelectronics, Chinese Academy of Sciences
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Bank configurable power modes24 Sep 2026US 2026/0288225 A1Micron Technology, Inc.
- Inductive energy harvesting and signal development for a memory device17 Sep 2026US 2026/0279416 A1Micron Technology, Inc.
- Ferroelectric memory devices and operation methods thereof17 Sep 2026US 2026/0279426 A1Yangtze Memory Technologies Co., Ltd.
- Memory circuit and method of operating the same17 Sep 2026US 2026/0279427 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric memory devices and operation methods thereof3 Sep 2026US 2026/0260681 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Detecting location within a network168US 10,397,742 B2Ivani, LLC · 2019
- Detecting location within a network105US 9,474,042 B1Ivani, LLC · 2016
- Analog ferroelectric memory with improved temperature range95US 9,697,882 B1Radiant Technologies, Inc. · 2017
- Ferroelectric memory cells78US 10,354,712 B2Micron Technology, Inc. · 2019
- Dynamic adjustment of memory cell digit line capacitance58US 9,786,348 B1Micron Technology, Inc. · 2017