Ferroelectric memory devices and operation methods thereof

A method of operating a ferroelectric memory device, comprising:

• performing a read operation on a first ferroelectric memory cell, comprising:
• applying a read voltage to a first word line coupled to the first ferroelectric memory cell;
• applying a pass voltage to a second word line coupled to a second ferroelectric memory cell;
• applying a back gate voltage to a first back gate line coupled to the first ferroelectric memory cell;
• and
• applying a bit line voltage to a first bit line coupled to a first channel layer of the first ferroelectric memory cell,
• wherein the first channel layer is between the first word line and the first back gate line.

A method of operating a memory device, comprising:

• performing an erase operation on a first ferroelectric memory cell, comprising:
• applying a first voltage to a first word line coupled to the first ferroelectric memory cell;
• applying a bit line voltage to a first bit line coupled to the first ferroelectric memory cell;
• applying a source line voltage to a source line;
• and
• applying an erase voltage to a first back gate line coupled to the first ferroelectric memory cell, the erase voltage being greater than at least one of the bit line voltage or the source line voltage.