Ferroelectric memory devices and operation methods thereof

A method of operating a ferroelectric memory device, comprising:

• performing, during a first phase, a read operation on a first ferroelectric memory cell, comprising:
• applying a read voltage to a first word line coupled to the first ferroelectric memory cell, and
• applying a pass voltage to a second word line coupled to a second ferroelectric memory cell;
• and
• performing, during a second phase after the first phase, a second operation, comprising:
• applying a first voltage to the second word line;
• applying a second voltage to a source line;
• and
• applying a third voltage to a bit line,
• wherein at least one of the second voltage or the third voltage is greater than the first voltage.

A ferroelectric memory device, comprising:

• a memory array comprising a first word line and a second word line;
• and
• a peripheral circuit coupled to the memory array, wherein the peripheral circuit is configured to perform operations comprising:
• performing, during a first phase, a program operation on a first ferroelectric memory cell, comprising:
• applying a program voltage to the first word line coupled to the first ferroelectric memory cell, and
• applying a pass voltage to the second word line coupled to a second ferroelectric memory cell;
• and
• performing, during a second phase after the first phase, a second operation, comprising:
• applying a first voltage to the second word line;
• applying a second voltage to a source line;
• and
• applying a third voltage to a bit line,
• wherein at least one of the second voltage or the third voltage is greater than the first voltage.