C30B 29/06
Silicon
C30B29/06 (Silicon) appears on 2,967 US grants and 3,398 published applications in this corpus.
Search patents in C30B- Granted patents
- 2,967
- Published applications
- 3,398
- Assignees
- 907
- Inventors
- 5,310
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 8 | 0 |
| 1978 | 9 | 0 |
| 1979 | 10 | 0 |
| 1980 | 14 | 0 |
| 1981 | 10 | 0 |
| 1982 | 12 | 0 |
| 1983 | 14 | 0 |
| 1984 | 8 | 0 |
| 1985 | 8 | 0 |
| 1986 | 12 | 0 |
| 1987 | 7 | 0 |
| 1988 | 7 | 0 |
| 1989 | 13 | 0 |
| 1990 | 9 | 0 |
| 1991 | 15 | 0 |
| 1992 | 25 | 0 |
| 1993 | 32 | 0 |
| 1994 | 34 | 0 |
| 1995 | 35 | 0 |
| 1996 | 26 | 0 |
| 1997 | 29 | 0 |
| 1998 | 48 | 0 |
| 1999 | 62 | 0 |
| 2000 | 79 | 0 |
| 2001 | 78 | 44 |
| 2002 | 93 | 112 |
| 2003 | 110 | 133 |
| 2004 | 80 | 101 |
| 2005 | 66 | 120 |
| 2006 | 75 | 126 |
| 2007 | 85 | 142 |
| 2008 | 79 | 107 |
| 2009 | 71 | 185 |
| 2010 | 88 | 201 |
| 2011 | 91 | 163 |
| 2012 | 103 | 149 |
| 2013 | 119 | 154 |
| 2014 | 123 | 135 |
| 2015 | 107 | 158 |
| 2016 | 127 | 146 |
| 2017 | 110 | 116 |
| 2018 | 113 | 129 |
| 2019 | 112 | 110 |
| 2020 | 83 | 140 |
| 2021 | 95 | 98 |
| 2022 | 89 | 137 |
| 2023 | 73 | 131 |
| 2024 | 90 | 161 |
| 2025 | 115 | 121 |
| 2026 | 60 | 79 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Device and method for producing a monocrystalline silicon rod in a zone-melting pulling system22 Sep 2026US 12,742,253 B2Siltronic AG
- Heater and single crystal growing apparatus22 Sep 2026US 12,742,255 B2Xi'an Eswin Material Technology Co., Ltd.
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal15 Sep 2026US 12,735,802 B2Sumco Corporation
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Single crystal furnace, heat conduction tool, and crystal pulling control method for single crystal furnace1 Oct 2026US 2026/0297795 A1Longi Green Energy Technology Co., Ltd.
- Water-Cooling Jacket and Single Crystal Furnace1 Oct 2026US 2026/0297796 A1Xi'an Eswin Material Technology Co., Ltd.
- Methods for preparing an ingot in an ingot puller apparatus having a heat shield disposed below a side heater1 Oct 2026US 2026/0297797 A1GlobalWafers Co., Ltd.
Most cited
By later US patents
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer585US 5,180,435 AResearch Triangle Institute · 1993
- Silicon epitaxial wafer and production method therefor550US 6,569,239 B2Shin-Etsu Handotai Co., Ltd. · 2003