C30B 29/02
Elements
C30B29/02 (Elements) appears on 4,238 US grants and 4,717 published applications in this corpus.
Search patents in C30B- Granted patents
- 4,238
- Published applications
- 4,717
- Assignees
- 1,488
- Inventors
- 8,032
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 10 | 0 |
| 1978 | 11 | 0 |
| 1979 | 13 | 0 |
| 1980 | 20 | 0 |
| 1981 | 11 | 0 |
| 1982 | 16 | 0 |
| 1983 | 18 | 0 |
| 1984 | 11 | 0 |
| 1985 | 12 | 0 |
| 1986 | 14 | 0 |
| 1987 | 10 | 0 |
| 1988 | 13 | 0 |
| 1989 | 34 | 0 |
| 1990 | 32 | 0 |
| 1991 | 39 | 0 |
| 1992 | 49 | 0 |
| 1993 | 56 | 0 |
| 1994 | 61 | 0 |
| 1995 | 76 | 0 |
| 1996 | 53 | 0 |
| 1997 | 51 | 0 |
| 1998 | 81 | 0 |
| 1999 | 89 | 0 |
| 2000 | 104 | 0 |
| 2001 | 93 | 48 |
| 2002 | 115 | 138 |
| 2003 | 123 | 162 |
| 2004 | 101 | 140 |
| 2005 | 83 | 176 |
| 2006 | 98 | 174 |
| 2007 | 110 | 190 |
| 2008 | 96 | 144 |
| 2009 | 100 | 234 |
| 2010 | 123 | 271 |
| 2011 | 119 | 217 |
| 2012 | 141 | 187 |
| 2013 | 156 | 197 |
| 2014 | 157 | 189 |
| 2015 | 156 | 222 |
| 2016 | 176 | 210 |
| 2017 | 151 | 178 |
| 2018 | 152 | 188 |
| 2019 | 171 | 159 |
| 2020 | 127 | 207 |
| 2021 | 137 | 176 |
| 2022 | 143 | 196 |
| 2023 | 123 | 196 |
| 2024 | 139 | 220 |
| 2025 | 166 | 178 |
| 2026 | 89 | 120 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Device and method for producing a monocrystalline silicon rod in a zone-melting pulling system22 Sep 2026US 12,742,253 B2Siltronic AG
- Heater and single crystal growing apparatus22 Sep 2026US 12,742,255 B2Xi'an Eswin Material Technology Co., Ltd.
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal15 Sep 2026US 12,735,802 B2Sumco Corporation
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Method of producing single-crystal spherical metal sodium nanoparticles1 Oct 2026US 2026/0297794 A1M. Technique Co., Ltd.
- Single crystal furnace, heat conduction tool, and crystal pulling control method for single crystal furnace1 Oct 2026US 2026/0297795 A1Longi Green Energy Technology Co., Ltd.
- Water-Cooling Jacket and Single Crystal Furnace1 Oct 2026US 2026/0297796 A1Xi'an Eswin Material Technology Co., Ltd.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer585US 5,180,435 AResearch Triangle Institute · 1993