C30B 29/08
Germanium
C30B29/08 (Germanium) appears on 161 US grants and 204 published applications in this corpus.
Search patents in C30B- Granted patents
- 161
- Published applications
- 204
- Assignees
- 136
- Inventors
- 527
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 1 |
| 2002 | 4 | 2 |
| 2003 | 5 | 8 |
| 2004 | 5 | 5 |
| 2005 | 2 | 5 |
| 2006 | 3 | 8 |
| 2007 | 3 | 10 |
| 2008 | 7 | 4 |
| 2009 | 7 | 12 |
| 2010 | 4 | 19 |
| 2011 | 2 | 12 |
| 2012 | 6 | 9 |
| 2013 | 10 | 6 |
| 2014 | 7 | 9 |
| 2015 | 5 | 8 |
| 2016 | 10 | 13 |
| 2017 | 3 | 6 |
| 2018 | 5 | 9 |
| 2019 | 7 | 5 |
| 2020 | 6 | 7 |
| 2021 | 5 | 8 |
| 2022 | 7 | 8 |
| 2023 | 4 | 7 |
| 2024 | 1 | 7 |
| 2025 | 13 | 12 |
| 2026 | 2 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxial wafer16 Jun 2026US 12,655,537 B2Shin-Etsu Handotai Co., Ltd.
- Multi-level injector with angled gas outlet for semiconductor epitaxy growth10 Mar 2026US 12,571,101 B2APPLIED Materials.Inc.
- Substrates for optoelectronic devices and methods of manufacturing same30 Dec 2025US 12,509,798 B2Socpra Sciences Et Genie S. E. C.
- Highly-textured thin films23 Dec 2025US 12,507,500 B2University of Houston System
- Preparation method for growing germanium sulfide (GeS2) single-crystal thin film on SiO2 substrate2 Dec 2025US 12,490,542 B2South China University of Technology
- Highly-textured thin films9 Jul 2026US 2026/0198128 A1University of Houston System
- Epitaxial silicon and doped silicon germanium superlattice and methods for preparing the same12 Feb 2026US 2026/0043170 A1APPLIED Materials.Inc.
- Methods for selectively depositing a boron doped silicon germanium layer on a surface of a substrate5 Feb 2026US 2026/0035835 A1ASM IP Holding B. V.
- Epitaxial layers in source/drain contacts and methods of forming the same1 Jan 2026US 2026/0006890 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Superconductivity in hyperdoped ge by molecular beam epitaxy13 Nov 2025US 2025/0347028 A1New York University
Most cited
By later US patents
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007
- Method of selective silicon germanium epitaxy at low temperatures317US 11,018,003 B2APPLIED Materials.Inc. · 2021
- Cyclic thermal anneal for dislocation reduction119US 6,635,110 B1Massachusetts Institute of Technology · 2003