Methods for selectively depositing a boron doped silicon germanium layer on a surface of a substrate
AssigneeASM IP Holding B.V.
InventorsDaniel Casey, Rami Khazaka, Patricio Eduardo Romero
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Abstract
Methods for selectively depositing a boron doped silicon germanium layer on a substrate disposed within a reaction chamber are disclosed. The methods disclosed include selectively depositing the boron doped silicon germanium layers by an epitaxial deposition process employing a silicon precursor, a germanium halide precursor, and a boron halide dopant precursor.
Claims20
A method of selectively depositing a boron doped silicon germanium layer on a substrate disposed within a reaction chamber, the method comprising:
- heating the substrate to a deposition temperature;
- and
- depositing the boron doped silicon germanium layer on a surface of the substrate by a selective epitaxial deposition process comprising:
- introducing a silicon precursor into the reaction chamber, the silicon precursor having a general formula of the form SinXmH2n+2−m, with X being selected from Cl, Br, and I, with n being an integer from at least 2 to at most 4, and with m being an integer from at least 1 to at most 2n+2−m;
- introducing a germanium halide precursor into the reaction chamber;
- and
- introducing a boron halide dopant precursor into the reaction chamber, the boron halide dopant precursor having a general formula of the form BpYqH3p-q, with Y being selected from Cl, Br, and I, with p being an integer from at least 1, and q being an integer from at least 1 to at most 3p.
A method of forming a boron doped silicon germanium layer on a substrate, the method comprising:
- heating the substrate to a deposition temperature 250° C. and 450° C.;
- and
- contacting the substrate with a precursor gas composition, the precursor gas composition comprising:
- a silicon precursor having a general formula of the form SinClmH2n+2−m, with n being an integer from at least 2 to at most 4, and with m being an integer from at least 1 to at most 2n+2−m;
- a germanium halide precursor comprising one or more of GeCl3H, GeCl4, GeClH3, GeCl2H2, and Ge2ClH5;
- and
- a boron halide dopant precursor comprising one or more of BCl3 and BBr3.
A method of forming a contact layer to a silicon germanium source/drain region, the method comprising:
- seating a substrate within a reaction chamber, the substrate comprising one or more silicon germanium source/drain regions;
- heating the substrate to a deposition temperature between 250° C. and 450° C.;
- and
- depositing a boron doped silicon germanium layer directly on a surface of the silicon germanium source/drain region by a selective epitaxial deposition process by co-flowing into the reaction chamber a precursor gas composition comprising:
- a silicon precursor having a general formula of the form SinXmH2n+2−m, with X being selected from Cl, Br, and I, with n being an integer from at least 2 to at most 4, and with m being an integer from at least 1 to at most 2n+2−m;
- a germanium halide precursor;
- and
- a boron halide dopant precursor having a general formula of the form BpYqH3p−q, with Y being selected from Cl, Br, and I, with p being an integer from at least 1, and q being an integer from at least 1 to at most 3p.
Dependencies are inferred from the claim text.