Epitaxial wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorAtsushi Suzuki
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Abstract
The present invention is an epitaxial wafer, including an epitaxial film of a semiconductor material different from silicon being formed on a silicon substrate, in which the epitaxial film has a film thickness of less than 1 at a wafer outer-peripheral portion when a film thickness at a center of the wafer is defined as 1. Thereby, the epitaxial wafer having a heteroepitaxial film with few defects without dependence on a dopant concentration or a variety of a silicon wafer is provided.
Claims6
An epitaxial wafer, comprising an epitaxial film of a semiconductor material different from silicon being formed on a silicon substrate, wherein
- the epitaxial film in a range of up to 10 mm inward from a periphery has a film thickness of less than 1 at a wafer outer-peripheral portion when a film thickness at a center of the wafer is defined as 1, and
- the epitaxial film is any of a silicon germanium film, a germanium film, and a silicon carbide film.
Dependencies are inferred from the claim text.