Method of selective silicon germanium epitaxy at low temperatures
AssigneeApplied Materials, Inc.
InventorsYi-Chiau Huang, Hua Chung
Life of this patent
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Abstract
In an embodiment, a method of selectively depositing a silicon germanium material on a substrate is provided. The method includes positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon containing single crystal thereon; maintaining the substrate at a temperature of about 450° C. or less; exposing the substrate to a process gas comprising: a silicon source gas, a germanium source gas, an etchant gas, a carrier gas, and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate.
Claims21
A method of depositing a silicon germanium material on a substrate, comprising:
- positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon containing single crystal thereon;
- maintaining the substrate at a temperature of about 350° C. or less;
- co-flowing a process gas and an etchant gas into the substrate processing chamber, the process gas comprising a silicon source gas, a germanium source gas, a carrier gas, and a dopant source gas;
- exposing the substrate to the process gas and the etchant gas;
- and
- epitaxially and selectively depositing a first silicon germanium material on the substrate.
A method of depositing a silicon germanium material on a substrate, comprising:
- positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon germanium single crystal thereon;
- maintaining the substrate at a temperature of about 350° C. or less;
- co-flowing a process gas and an etchant gas into the substrate processing chamber, the process gas comprising a silicon source gas, a germanium source gas, a carrier gas, and a dopant source gas;
- exposing the substrate to the process gas and the etchant gas;
- and
- epitaxially and selectively depositing the silicon germanium material on the substrate, the silicon germanium material having a resistivity of about 0.3 mΩ·cm.
A non-transitory computer readable medium that includes instructions that cause a computer system to control a substrate processing apparatus to perform a process, comprising:
- positioning a substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon containing single crystal thereon;
- maintaining the substrate at a temperature of about 350° C. or less;
- co-flowing a process gas and an etchant gas into the substrate processing chamber, the process gas comprising a silicon source gas, a germanium source gas, a carrier gas, and a dopant source;
- exposing the substrate to the process gas and the etchant gas;
- and
- epitaxially and selectively depositing a first silicon germanium material on the substrate.
Dependencies are inferred from the claim text.