C30B 23/02
Epitaxial-layer growth
C30B23/02 (Epitaxial-layer growth) appears on 1,793 US grants and 1,835 published applications in this corpus.
Search patents in C30B- Granted patents
- 1,793
- Published applications
- 1,835
- Assignees
- 811
- Inventors
- 3,845
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 7 | 0 |
| 1979 | 12 | 0 |
| 1980 | 11 | 0 |
| 1981 | 8 | 0 |
| 1982 | 6 | 0 |
| 1983 | 5 | 0 |
| 1984 | 12 | 0 |
| 1985 | 18 | 0 |
| 1986 | 15 | 0 |
| 1987 | 15 | 0 |
| 1988 | 10 | 0 |
| 1989 | 23 | 0 |
| 1990 | 20 | 0 |
| 1991 | 24 | 0 |
| 1992 | 28 | 0 |
| 1993 | 31 | 0 |
| 1994 | 36 | 0 |
| 1995 | 38 | 0 |
| 1996 | 33 | 0 |
| 1997 | 26 | 0 |
| 1998 | 36 | 0 |
| 1999 | 45 | 0 |
| 2000 | 45 | 0 |
| 2001 | 36 | 21 |
| 2002 | 45 | 69 |
| 2003 | 60 | 62 |
| 2004 | 50 | 60 |
| 2005 | 28 | 37 |
| 2006 | 35 | 44 |
| 2007 | 19 | 45 |
| 2008 | 29 | 51 |
| 2009 | 18 | 48 |
| 2010 | 42 | 65 |
| 2011 | 24 | 59 |
| 2012 | 34 | 61 |
| 2013 | 39 | 84 |
| 2014 | 52 | 83 |
| 2015 | 65 | 88 |
| 2016 | 61 | 86 |
| 2017 | 58 | 85 |
| 2018 | 57 | 46 |
| 2019 | 73 | 75 |
| 2020 | 51 | 73 |
| 2021 | 48 | 107 |
| 2022 | 64 | 96 |
| 2023 | 74 | 111 |
| 2024 | 87 | 111 |
| 2025 | 77 | 97 |
| 2026 | 55 | 71 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Hierarchical inverted/normal cobalt ferrite nano-chessboard6 Oct 2026US 12,753,527 B2Morgan State University
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same1 Sep 2026US 12,723,327 B2SiCrystal GmbH
- Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal25 Aug 2026US 12,716,145 B2Central Research Institute of Electric Power Industry
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Sic wafer and sic epitaxial wafer8 Oct 2026US 2026/0313999 A1Resonac Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Systems and Methods for Modifying Crystal Growth Processes Based on Sensor Data1 Oct 2026US 2026/0297800 A1Wolfspeed, Inc.
- Modifying Crystal Growth Processes Based on Predicted In Situ Parameters1 Oct 2026US 2026/0297801 A1Wolfspeed, Inc.
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Plasma pre-clean module and process477US 9,299,557 B2ASM IP Holding B. V. · 2016
- Plasma pre-clean module and process474US 9,514,927 B2ASM IP Holding B. V. · 2016