C30B 23/06
Heating of the deposition chamber, the substrate or the materials to be
Official title: Heating of the deposition chamber, the substrate or the materials to be evaporated
C30B23/06 (Heating of the deposition chamber, the substrate or the materials to be) appears on 432 US grants and 578 published applications in this corpus.
Search patents in C30B- Granted patents
- 432
- Published applications
- 578
- Assignees
- 289
- Inventors
- 1,068
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 8 | 0 |
| 1986 | 6 | 0 |
| 1987 | 10 | 0 |
| 1988 | 2 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 3 | 0 |
| 1997 | 4 | 0 |
| 1998 | 7 | 0 |
| 1999 | 6 | 0 |
| 2000 | 9 | 0 |
| 2001 | 1 | 3 |
| 2002 | 3 | 7 |
| 2003 | 7 | 4 |
| 2004 | 5 | 8 |
| 2005 | 1 | 3 |
| 2006 | 3 | 4 |
| 2007 | 1 | 9 |
| 2008 | 4 | 11 |
| 2009 | 1 | 11 |
| 2010 | 7 | 18 |
| 2011 | 5 | 11 |
| 2012 | 5 | 18 |
| 2013 | 9 | 23 |
| 2014 | 13 | 24 |
| 2015 | 14 | 22 |
| 2016 | 19 | 31 |
| 2017 | 17 | 37 |
| 2018 | 12 | 14 |
| 2019 | 29 | 31 |
| 2020 | 19 | 31 |
| 2021 | 27 | 39 |
| 2022 | 24 | 48 |
| 2023 | 29 | 45 |
| 2024 | 34 | 54 |
| 2025 | 37 | 42 |
| 2026 | 17 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Hierarchical inverted/normal cobalt ferrite nano-chessboard6 Oct 2026US 12,753,527 B2Morgan State University
- System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same1 Sep 2026US 12,723,327 B2SiCrystal GmbH
- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Device and method for growing silicon carbide single crystal based on PVT method11 Aug 2026US 12,703,928 B2Centrasky Crystal Science (Ningbo) Semiconductor Materials Co., Ltd.
- SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method21 Jul 2026US 12,686,945 B2Kwansei Gakuin Educational Foundation
- Systems and Methods for Modifying Crystal Growth Processes Based on Sensor Data1 Oct 2026US 2026/0297800 A1Wolfspeed, Inc.
- Modifying Crystal Growth Processes Based on Predicted In Situ Parameters1 Oct 2026US 2026/0297801 A1Wolfspeed, Inc.
- Relative Positioning of Crystalline Material in Crystal Growth Systems1 Oct 2026US 2026/0297802 A1Wolfspeed, Inc.
- Silicon Carbide Crystal Growth System1 Oct 2026US 2026/0297803 A1Wolfspeed, Inc.
- Crucible and method of manufacturing the same24 Sep 2026US 2026/0286571 A1Sec Carbon, Limited
Most cited
By later US patents
- Method for conducting heat to or from an article being treated under vacuum120US 4,261,762 AEaton Corporation · 1981
- Semiconductor heterostructures and related methods83US 7,049,627 B2AmberWave Systems Corporation · 2006
- Boron nitride crucible70US 5,158,750 APraxair S. T. Technology, Inc. · 1992
- Semiconductor substrate semiconductor device and liquid crystal display device59US 6,057,557 ACanon Kabushiki Kaisha · 2000
- Method of growing epitaxial semiconductor films utilizing radiant heating48US 4,115,163 A1978