Crucible and method of manufacturing the same

Abstract

A crucible with higher growth rate of SiC single crystals and a method of manufacturing the same are provided. A crucible 10 is a crucible to be used to manufacture an SiC single crystal by the sublimation method, including: a bottom 120; a side wall 122 provided to extend upward from a peripheral edge of the bottom 120; and a lid 16 placed over the top of the side wall 122. The bottom 120, side wall 122, and lid 16 are formed from graphite. The crucible 10 has a vertical thermal conductivity VT along a vertical direction in which the side wall 122 extends, and a lateral thermal conductivity LT along a lateral direction perpendicular to the vertical direction. The vertical thermal conductivity VT is higher than the lateral thermal conductivity LT.

Dependencies are inferred from the claim text.