C30B 23/063
Heating of the substrate
Official title: {Heating of the substrate}
C30B23/063 (Heating of the substrate) appears on 80 US grants and 116 published applications in this corpus.
Search patents in C30B- Granted patents
- 80
- Published applications
- 116
- Assignees
- 83
- Inventors
- 294
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 3 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 2 |
| 2011 | 1 | 3 |
| 2012 | 2 | 5 |
| 2013 | 2 | 3 |
| 2014 | 1 | 2 |
| 2015 | 3 | 3 |
| 2016 | 4 | 8 |
| 2017 | 1 | 7 |
| 2018 | 3 | 4 |
| 2019 | 4 | 6 |
| 2020 | 4 | 4 |
| 2021 | 2 | 10 |
| 2022 | 7 | 12 |
| 2023 | 6 | 16 |
| 2024 | 8 | 11 |
| 2025 | 13 | 9 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Molecular beam epitaxy thin film growth apparatus17 Mar 2026US 12,577,654 B2University of Ulsan Foundation for Industry Cooperation
- Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer3 Feb 2026US 12,540,416 B2Kwansei Gakuin Educational Foundation
- Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer30 Dec 2025US 12,509,795 B2Kwansei Gakuin Educational Foundation
- Seed Crystal Assembly and Method of Growing SiC Single Crystal Boules4 Jun 2026US 2026/0152870 A1
- Managing growth of silicon carbide crystals21 May 2026US 2026/0139405 A1Semiconductor Components Industries, LLC
- Large diameter silicon carbide wafers12 Mar 2026US 2026/0071350 A1Wolfspeed, Inc.
- Large diameter silicon carbide wafers12 Mar 2026US 2026/0071351 A1Wolfspeed, Inc.
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Most cited
By later US patents
- Method of growing epitaxial semiconductor films utilizing radiant heating48US 4,115,163 A1978
- Molecular beam method for processing a plurality of substrates28US 4,181,544 ABell Telephone Laboratories, Incorporated · 1980
- Process for the amorphous growth of an element with crystallization under radiation28US 4,529,617 ACommissariat A L' Energie Atomique · 1985
- Effusion cells for molecular beam epitaxy apparatus24US 4,239,955 ABell Telephone Laboratories, Incorporated · 1980
- Method for preparing coarse-crystal or single-crystal metal films23US 4,325,776 ASiemens Aktiengesellschaft · 1982