Seed Crystal Assembly and Method of Growing SiC Single Crystal Boules

Abstract

The present invention relates to a seed crystal assembly for growing a single crystal boule in a physical vapor transport, PVT, process. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. A seed crystal assembly comprises a base structure which is connectable to a crucible, the base structure having a base diameter across a central axis of the seed crystal assembly and base height along the central axis, and a single crystal seed crystal which is designed for growing the single crystal boule on a growth surface. The single crystal seed crystal is attached to the base structure, the seed crystal having a seed crystal diameter across the central axis and a seed crystal height along the central axis, wherein a specific heat conductivity of the base structure differs by less than or equal to 25% from a specific heat conductivity of the seed crystal at a growth temperature between 2000° C. and 2600° C.

Dependencies are inferred from the claim text.