Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer
AssigneesKwansei Gakuin Educational Foundation, Toyo Aluminium Kabushiki Kaisha, Toyota Tsusho Corporation
InventorsTadaaki Kaneko, Daichi Dojima, Moeko Matsubara, Yoshitaka Nishio
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Abstract
An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate. The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.
Claims18
A method for manufacturing an aluminum nitride substrate, the method comprising a crystal growth step of forming an aluminum nitride layer on a silicon carbide underlying substrate having through holes, wherein the crystal growth step comprises disposing the silicon carbide underlying substrate and a source of the aluminum nitride layer to face each other and heating the silicon carbide underlying substrate and the source in such a way to form a temperature gradient between the silicon carbide underlying substrate and the source.
A method of forming an aluminum nitride layer, the method comprising:
- a through hole formation step of forming through holes in a silicon carbide underlying substrate before forming an aluminum nitride layer on a surface of the silicon carbide underlying substrate, and
- a crystal growth step of forming the aluminum nitride layer on the silicon carbide underlying substrate having through holes, wherein the crystal growth step comprises disposing the silicon carbide underlying substrate and a source of the aluminum nitride layer to face each other and heating the silicon carbide underlying substrate and the source in such a way to form a temperature gradient between the silicon carbide underlying substrate and the source.
A method of forming an aluminum nitride layer, the method comprising:
- a crystal growth step of forming the aluminum nitride layer on a silicon carbide underlying substrate having through holes, wherein the crystal growth step comprises disposing the silicon carbide underlying substrate and a source of the aluminum nitride layer to face each other and heating the silicon carbide underlying substrate and the source in such a way to form a temperature gradient between the silicon carbide underlying substrate and the source.
Dependencies are inferred from the claim text.