SiC single-crystal growth apparatus and method of growing SiC crystal

Abstract

An SiC single-crystal growth apparatus and a method of growing an SiC crystal are provided capable of reducing variations in the temperature distribution in the seed crystal and/or reducing deformation of, and/or damage to, the seed crystal, thereby growing an SiC single crystal with reduced defects and/or cracks. An SiC single-crystal growth apparatus (1) includes: a heating vessel (10) including a source material-containing portion (12) adapted to contain a solid source material of SiC in one of an upper portion or a lower portion (e.g., on the bottom portion 13) of an interior space S defined by a cylindrical peripheral side portion (14), and including a seat (17) located in another portion located opposite to said one portion (e.g., lid (16)) for allowing a seed crystal (2) of SiC to be mounted thereon; and a heating member (3) adapted to heat the solid source material M(s), where: the seed crystal (12) is mounted on the seat (17) with a first anisotropic sheet (41) positioned therebetween, the first anisotropic sheet having anisotropy in thermal conductivity; and, in the first anisotropic sheet (41), the thermal conductivity in a direction in the plane of the sheet, x, is high and the thermal conductivity in the thickness direction of the sheet, y, is low.

Dependencies are inferred from the claim text.