Method for preparing coarse-crystal or single-crystal metal films
AssigneeSiemens Aktiengesellschaft
InventorGunter Menzel
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Abstract
For preparing coarse-crystal or single-crystal metal films by vapor-depositing or atomizing a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminum alloy or a Ti-V alloy with a vanadium content of more than about 70 atom percent is first precipitated on the substrate which is cooled to a temperature below about -90.degree. C. Subsequently, the amorphous layer is recrystallized by heating the substrate with the deposited metal layer to at least room temperature and maximally 300.degree. C. The so-prepared metal films have particular application to integrated circuits.
Claims1
A method for producing coarse-crystal or single-crystal films, comprising:
- (a) providing a cooled substrate maintained at a temperature below about -90.degree. C.;
- (b) precipitating as a layer on said cooled substrate by vapor deposition or atomizing a metal selected from the group consisting of tantalum, tungsten, copper, cobalt, aluminum, aluminum alloys and titanium-vanadium alloys having a vanadium content of greater than about 70 atom percent, said metal layer being present on said substrate in the amorphous phase;
- (c) heating said substrate having said metal layer deposited thereon to about room temperature to produce crystals, the diameter of which is larger than about 50 .mu.m.
Dependencies are inferred from the claim text.