Molecular beam epitaxy thin film growth apparatus

A molecular beam epitaxy (MBE) thin film growth apparatus comprising:

• a growth chamber which is connected to a vacuum pump and of which an inside is maintained in an ultra-high vacuum state;
• a substrate manipulator which is provided inside the growth chamber and on which a substrate is mounted;
• a load-lock chamber which is provided outside the growth chamber and communicates with the growth chamber and in which at least one substrate, which is mounted on the substrate manipulator, for growing a thin film is located;
• and
• a substrate transfer rod that transfers the substrate from the load-lock chamber to the growth chamber or from the growth chamber to the load-lock chamber,
• wherein the load-lock chamber is disposed to face the substrate manipulator and disposed collinear with a substrate transfer path of the substrate transfer rod,
• wherein the load-lock chamber further includes a substrate storage part in which at least one substrate that is moved to the growth chamber to grow the thin film is stored,
• wherein the substrate storage part further includes:
• a rotation member that is fixed to a center of the load-lock chamber and rotated in one direction or the other direction;
• and
• a plurality of storage units which are installed in the rotation member and in which a plurality of substrates are stored,
• wherein the rotation member is provided with a substrate movement part formed to pass through a portion at a location in which the storage unit is not installed, and
• when the substrate is to be moved from the load-lock chamber to the growth chamber or moved from the growth chamber to the load-lock chamber, the rotation member is rotated so that a substrate movement path of the substrate transfer rod and the substrate movement part are collinear with each other.