Process for the amorphous growth of an element with crystallization under radiation
AssigneeCommissariat a l'Energie Atomique
InventorsAndre Chenevas-Paule, Robert Cuchet, Jean-Francois Eloy
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Abstract
The present invention relates to a process for the amorphous growth of an element with crystallization under radiation. An element is deposited on a support contained in an enclosure under a vacuum in known manner and simultaneously one or more predetermined surfaces of the layer deposited on the support are irradiated, said irradiation being obtained by a coherent electromagnetic irradiation radiation beam having a power and wavelength suitable for desorbing said surfaces.
Claims10
A process for the amorphous growth of an element with local crystallization under coherent electromagnetic raidiation, the growth of said element being effected on a support contained in an enclosure which is under a vacuum, said enclosure containing the source of said element, which process comprises:
- (a) continuously depositing said element on the support in amporphous form, and
- (b) temporarily irradiating one or more predetermined surfaces of the layer deposited on the support during said continuous deposition, wherein said irradiation is effected by a coherent electromagnetic radiation beam, the power W of the beam being able to effect a desorption of said surface, and the wavelength .lambda. of the coherent electromagnetic radiation being below 400 nm.
Dependencies are inferred from the claim text.