C30B 23/066
Heating of the material to be evaporated
Official title: {Heating of the material to be evaporated}
C30B23/066 (Heating of the material to be evaporated) appears on 246 US grants and 314 published applications in this corpus.
Search patents in C30B- Granted patents
- 246
- Published applications
- 314
- Assignees
- 199
- Inventors
- 636
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 9 | 0 |
| 2001 | 0 | 3 |
| 2002 | 2 | 6 |
| 2003 | 6 | 3 |
| 2004 | 3 | 5 |
| 2005 | 1 | 2 |
| 2006 | 2 | 4 |
| 2007 | 1 | 6 |
| 2008 | 3 | 7 |
| 2009 | 1 | 8 |
| 2010 | 5 | 14 |
| 2011 | 4 | 6 |
| 2012 | 3 | 9 |
| 2013 | 6 | 13 |
| 2014 | 9 | 21 |
| 2015 | 9 | 16 |
| 2016 | 11 | 19 |
| 2017 | 15 | 25 |
| 2018 | 6 | 6 |
| 2019 | 21 | 15 |
| 2020 | 12 | 14 |
| 2021 | 12 | 18 |
| 2022 | 9 | 16 |
| 2023 | 16 | 18 |
| 2024 | 13 | 29 |
| 2025 | 12 | 14 |
| 2026 | 8 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same1 Sep 2026US 12,723,327 B2SiCrystal GmbH
- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Device and method for growing silicon carbide single crystal based on PVT method11 Aug 2026US 12,703,928 B2Centrasky Crystal Science (Ningbo) Semiconductor Materials Co., Ltd.
- System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same14 Jul 2026US 12,680,190 B2SiCrystal GmbH
- Method of manufacturing silicon carbide seed crystal and method of manufacturing silicon carbide ingot23 Jun 2026US 12,662,750 B2GlobalWafers Co., Ltd.
- Relative Positioning of Crystalline Material in Crystal Growth Systems1 Oct 2026US 2026/0297802 A1Wolfspeed, Inc.
- Sic single-crystal growth apparatus23 Jul 2026US 2026/0209987 A1Sec Carbon, Limited
- Source arrangement and thermal laser epitaxy system16 Jul 2026US 2026/0201540 A1Max-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
- Crystal growth apparatus2 Jul 2026US 2026/0185264 A1Metal Industries Research & Development Centre
- Apparatus and method for growing silicon carbide25 Jun 2026US 2026/0176791 A1Tongwei Microelectronics Co., Ltd.
Most cited
By later US patents
- Semiconductor heterostructures and related methods83US 7,049,627 B2AmberWave Systems Corporation · 2006
- Boron nitride crucible70US 5,158,750 APraxair S. T. Technology, Inc. · 1992
- Semiconductor substrate semiconductor device and liquid crystal display device59US 6,057,557 ACanon Kabushiki Kaisha · 2000
- Method of production of a semiconductor substrate48US 6,022,458 ACanon Kabushiki Kaisha · 2000
- Rapid response vapor source44US 5,558,720 AThe Pennsylvania State Research Foundation · 1996