System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same

Sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process, the sublimation system (100) comprising:

• a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108);
• a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102);
• and
• a thermal insulation unit (117) at least partly surrounding the crucible (102);
• wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field,
• wherein the heating system is formed with an asymmetry that causes an asymmetry in the generated temperature field,
• wherein the thermal insulation unit (117) is structured with one or more discontinuities in a longitudinal direction along the longitudinal axis (120), and
• wherein each discontinuity is positioned at a radial position that causes the discontinuity of the thermal insulation unit (117) to compensate the asymmetry of the heating system.