Sic single-crystal growth apparatus

A method of growing an SiC single-crystal, comprising growing an SiC single-crystal using an SiC single-crystal growth apparatus,

• the SiC single-crystal growth apparatus comprising:
• a heating vessel including a material containing portion having a cylindrical peripheral side portion and adapted to contain solid source material of SiC in a portion of an interior space defined by the peripheral side portion, and
• a seed-crystal mounting portion located in a portion of the interior space of the material containing portion that does not contain the solid source material, the seed-crystal mounting portion adapted to allow a seed crystal of SiC to be placed thereon;
• and
• a heating member adapted to heat the heating vessel,
• the heating member including at least a first heating sub-member having a first heating surface positioned outside of the heating vessel to face a major surface portion of the material containing portion in such a positional relationship as to cover an entire outer surface of the major surface portion, the major surface portion located opposite to the seed-crystal mounting portion,
• the apparatus satisfying the relationship B/A≥2, where A is a sectional area of the interior space and B is an area of the first heating surface, wherein:
• the heating member further includes a second heating sub-member having a second heating surface positioned outside of the heating vessel to face the peripheral side portion of the material containing portion in such a positional relationship as to cover an entire outer surface of the peripheral side portion;
• and
• the growing of an SiC single-crystal is performed so that C is larger than D, where C is heating energy of the first heating sub-member and D is heating energy of the second heating sub-member.