Apparatus and method for growing silicon carbide

An apparatus for growing silicon carbide,

• comprising a growth crucible, the growth crucible having an opening and being configured to accommodate silicon carbide powder;
• a heating apparatus, the heating apparatus being arranged around the growth crucible and configured to heat the growth crucible;
• a seed crystal positioning cover, the seed crystal positioning cover being arranged at the opening and in clearance fit with an edge of the opening, and seed crystals being bonded to a bottom side of the seed crystal positioning cover and configured to grow silicon carbide crystals;
• a positioning frame, at least part of the positioning frame extending above the growth crucible;
• a weighing apparatus, the weighing apparatus being fixedly arranged on a portion, extending above the growth crucible, of the positioning frame;
• and
• a bearing connector, one end of the bearing connector being connected with a top side of the seed crystal positioning cover, and the other end of the bearing connector being connected with the weighing apparatus;
• wherein the weighing apparatus is configured to hoist the seed crystal positioning cover through the bearing connector and measure weights of the seed crystal positioning cover, the seed crystals and the silicon carbide crystals;
• and
• a bent check curtain is further arranged on an edge of the seed crystal positioning cover, and the bent check curtain shields a gap between the edge of the seed crystal positioning cover and the edge of the opening.