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AssigneeCentrasky Crystal Science (Ningbo) Semiconductor Materials Co., Ltd.
InventorsYuan Ma, Weiming Xue, Yaobo Pan
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A device and a method for growing a silicon carbide single crystal based on a PVT method are provided. The device comprises a growth chamber, a crucible, one or more lifting rods, and a stock bin for holding raw materials. The crucible, the lifting rods and the stock bin are located within the growth chamber, and the stock bin is located within the crucible. The stock bin comprises independent storage compartments, and each of the lifting rods extends from a bottom of the crucible, passes through a bottom of one of the storage compartments, and extends to a top of the storage compartment. The lifting rod moves upward and downward to seal the storage compartment, or creating a channel for gas-phase raw materials transmission at the top of the storage compartment. This device increases the utilization rate of raw materials and improves the quality of crystal growth.
A device for growing a silicon carbide single crystal based on a PVT method, comprising a growth chamber, a crucible, and a stock bin for holding raw materials, wherein the crucible and the stock bin are located in the growth chamber, and the stock bin is located in the crucible, wherein the stock bin comprises independent storage compartments, and the device further comprises one or more lifting rods, wherein each of the lifting rods is located in the growth chamber, extends from a bottom of the crucible, passes through a bottom of one of the storage compartments, and extends to a top of the storage compartment, wherein the lifting rod moves upward and downward to seal the storage compartment, or creating a channel for gas-phase raw materials transmission at the top of the storage compartment.
Dependencies are inferred from the claim text.