Method for conducting heat to or from an article being treated under vacuum
AssigneeEaton Corporation
InventorMonroe L. King
Life of this patent
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Abstract
A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
Claims6
The method of treating an article in a vacuum chamber comprising the steps of positioning the article on a support plate at a treating station within said vacuum chamber and providing a gas under pressure between the article and the support plate to conduct heat between the article and the support plate.
Dependencies are inferred from the claim text.