C30B 23/04
Pattern deposit
Official title: Pattern deposit, e.g. by using masks
C30B23/04 (Pattern deposit) appears on 68 US grants and 62 published applications in this corpus.
Search patents in C30B- Granted patents
- 68
- Published applications
- 62
- Assignees
- 66
- Inventors
- 201
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 4 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 4 |
| 2008 | 1 | 3 |
| 2009 | 0 | 0 |
| 2010 | 2 | 2 |
| 2011 | 0 | 2 |
| 2012 | 1 | 2 |
| 2013 | 2 | 5 |
| 2014 | 2 | 3 |
| 2015 | 4 | 5 |
| 2016 | 1 | 2 |
| 2017 | 5 | 5 |
| 2018 | 6 | 2 |
| 2019 | 6 | 6 |
| 2020 | 3 | 3 |
| 2021 | 1 | 0 |
| 2022 | 0 | 3 |
| 2023 | 3 | 5 |
| 2024 | 0 | 4 |
| 2025 | 2 | 1 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Multi-regional epitaxial growth and related systems and articles16 Jun 2026US 12,660,519 B2Massachusetts Institute of Technology
- Fabrication method26 May 2026US 12,642,010 B2Microsoft Technology Licensing, LLC
- Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer4 Nov 2025US 12,460,315 B2Kwansei Gakuin Educational Foundation
- Semiconductor wafer and method for manufacturing same4 Mar 2025US 12,243,739 B2Mitsubishi Electric Corporation
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Patterned aluminum nitride composite substrate and preparation method thereof4 Jun 2026US 2026/0152873 A1Peking University
- Photocatalytic co2 reduction with binary catalyst-decorated nanostructures26 Feb 2026US 2026/0054255 A1The Regents of the University of Michigan
- Photocatalytic co2 reduction with co-catalyst decorated nanostructures13 Nov 2025US 2025/0346492 A1The Regents of the University of Michigan
- In situ damage free etching of ga2o3 using ga flux for fabricating high aspect ratio 3d structures25 Jul 2024US 2024/0249954 A1Ohio State Innovation Foundation
Most cited
By later US patents
- Confined lateral selective epitaxial growth112US 4,948,456 ADelco Electronics Corporation · 1990
- Process for producing compound semiconductor using an amorphous nucleation site49US 5,010,033 ACanon Kabushiki Kaisha · 1991
- Compositionally varied materials and method for synthesizing the materials43US 4,520,039 ASovonics Solar Systems · 1985
- Stencil process for high resolution pattern replication29US 4,013,502 ATexas Instruments Incorporated · 1977
- Process for the amorphous growth of an element with crystallization under radiation28US 4,529,617 ACommissariat A L' Energie Atomique · 1985