IN SITU DAMAGE FREE ETCHING OF Ga2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES

Abstract

A method for using gallium beam flux in an ultra-low vacuum environment to etch Ga2O3 epilayer surfaces is provided. An Ga2O3 epilayer surface (105) is patterned by applying a SiO2 mask (107) that corresponds to a desired structure (810). The patterned surface is then placed in an ultra-low vacuum environment (130) and is heated to a very high temperature (820; 830). At the same time, a gallium flux is supplied to the patterned surface in the ultra-low vacuum environment (840). The gallium flux causes etching in the patterned surface that is not covered by the SiO2 mask. Using this method, sub-micron (˜100 nm) three-dimensional (3D) structures like fins, trenches, and nano-pillars can be fabricated with vertical sidewalls.

Dependencies are inferred from the claim text.