Semiconductor wafer and method for manufacturing same
AssigneeMitsubishi Electric Corporation
InventorsYuki Taketomi, Kohei Miki, Shinichi Miyakuni
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor wafer according to the invention of the present application includes a first step of forming a gallium nitride growth layer which is divided into a plurality of small sections, on an upper surface of a silicon substrate and a second step of filling portions between the plurality of small sections with an insulating film, wherein the insulating film exerts stress to the silicon substrate in a direction opposite to a direction in which the gallium nitride growth layer exerts stress on the silicon substrate.
Claims9
A semiconductor wafer comprising:
- a silicon substrate;
- a gallium nitride growth layer provided on an upper surface of the silicon substrate and divided into a plurality of small sections;
- and
- an insulating layer provided on the upper surface of the silicon substrate, the insulating layer filling portions between the plurality of small sections, wherein
- the insulating layer exerts stress to the silicon substrate in a direction opposite to a direction in which the gallium nitride growth layer exerts stress on the silicon substrate,
- the insulating layer includes a silicon nitride film,
- a plurality of convex silicon portions are formed on a side of the upper surface of the silicon substrate, and
- the plurality of small sections are provided on the plurality of convex silicon portions.
A semiconductor wafer comprising:
- a silicon substrate;
- a gallium nitride growth layer provided on an upper surface of the silicon substrate and divided into a plurality of small sections;
- and
- an insulating layer provided on the upper surface of the silicon substrate, the insulating layer filling portions between the plurality of small sections, wherein
- the insulating layer exerts stress to the silicon substrate in a direction opposite to a direction in which the gallium nitride growth layer exerts stress on the silicon substrate,
- the insulating layer includes a silicon nitride film, and
- concave portions are formed in the insulating layer between pairs of small sections adjacent to each other among the plurality of small sections.
Dependencies are inferred from the claim text.