C30B 23/025
Characterised by the substrate
Official title: {characterised by the substrate}
C30B23/025 (Characterised by the substrate) appears on 441 US grants and 660 published applications in this corpus.
Search patents in C30B- Granted patents
- 441
- Published applications
- 660
- Assignees
- 280
- Inventors
- 1,207
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 3 |
| 2003 | 2 | 0 |
| 2004 | 1 | 5 |
| 2005 | 0 | 1 |
| 2006 | 3 | 7 |
| 2007 | 0 | 13 |
| 2008 | 10 | 15 |
| 2009 | 6 | 7 |
| 2010 | 7 | 20 |
| 2011 | 7 | 26 |
| 2012 | 13 | 24 |
| 2013 | 15 | 38 |
| 2014 | 22 | 39 |
| 2015 | 30 | 58 |
| 2016 | 32 | 41 |
| 2017 | 34 | 53 |
| 2018 | 33 | 29 |
| 2019 | 40 | 33 |
| 2020 | 30 | 33 |
| 2021 | 14 | 39 |
| 2022 | 25 | 31 |
| 2023 | 34 | 48 |
| 2024 | 24 | 40 |
| 2025 | 36 | 29 |
| 2026 | 23 | 28 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Superconducting compounds and methods for making the same8 Sep 2026US 12,733,409 B2Quantum Designed Materials Ltd.
- Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal25 Aug 2026US 12,716,145 B2Central Research Institute of Electric Power Industry
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer28 Jul 2026US 12,692,619 B2Kwansei Gakuin Educational Foundation
- Apparatus for producing silicon carbide crystal28 Jul 2026US 12,692,620 B2Hermes-Epitek Corporation
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Sic wafer and sic epitaxial wafer8 Oct 2026US 2026/0313999 A1Resonac Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Relative Positioning of Crystalline Material in Crystal Growth Systems1 Oct 2026US 2026/0297802 A1Wolfspeed, Inc.
- Method of Providing a Deformation-Resistant Substrate, Method of Growing a Layer Using the Deformation-Resistant Substrate, and a Batch Comprising a Plurality of Monocrystalline Substrates17 Sep 2026US 2026/0275568 A1SiCrystal GmbH
Most cited
By later US patents
- Plasma pre-clean module and process477US 9,299,557 B2ASM IP Holding B. V. · 2016
- Plasma pre-clean module and process474US 9,514,927 B2ASM IP Holding B. V. · 2016
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Method for improved growth of semipolar (Al,In,Ga,B)N248US 7,691,658 B2Japan Science and Technology Agency · 2010
- Gallium nitride materials and methods144US 6,649,287 B2Nitronex Corporation · 2003