Method of Providing a Deformation-Resistant Substrate, Method of Growing a Layer Using the Deformation-Resistant Substrate, and a Batch Comprising a Plurality of Monocrystalline Substrates

Abstract

The present invention relates to a method of providing a deformation-resistant substrate for growing a layer in a direction of growth (Y) in a reactor on the deformation-resistant substrate, the method comprising the steps of: measuring an internal stress value of a monocrystalline raw substrate in a radial direction (r) perpendicular to the direction of growth (Y); determining, based on the measured internal stress value, a radial size (d_substrate) for the deformation-resistant substrate in the radial direction (r) and an axial size (t_substrate) for the deformation-resistant substrate in the direction of growth (Y); and providing the deformation-resistant substrate by selecting a deformation-resistant substrate with the determined radial size (d_substrate) and the determined axial size (t_substrate).

Dependencies are inferred from the claim text.