Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal

Abstract

Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions T1 to T4, where regions R1 to R3 of a basal plane whose shear stresses exceed critical resolved shear stress, and regions S1 to S4 of a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions T1 to T4 is smaller than the area of regions V1 to V4 where a region R4 of the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions S1 to S4.

Dependencies are inferred from the claim text.