Apparatus for producing silicon carbide crystal
AssigneeHermes-Epitek Corporation
InventorsChih-Lung Lin, Po-Fei Yang, Chie-Sheng Liu, Chung-Hao Lin, Hsin-Chen Yeh, Hao-Wen Wu
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Abstract
An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.
Claims9
An apparatus for producing silicon carbide crystal, comprising:
- a crucible comprising a top portion and a bottom portion, wherein the bottom portion comprising silicon carbide powder;
- an upper cover positioned on the top portion and defining a reaction space with the crucible;
- and
- a composite structure comprising a plurality of graphite layers and a silicon carbide seed crystal, wherein the silicon carbide seed crystal is positioned inside the upper cover through the graphite layers, edges of the graphite layers comprise a thread structure, and the thread structure is fixed to the upper cover.
Dependencies are inferred from the claim text.