C30B 23/08
By condensing ionised vapours
Official title: by condensing ionised vapours (by reactive sputtering C30B25/06)
C30B23/08 (By condensing ionised vapours) appears on 55 US grants and 73 published applications in this corpus.
Search patents in C30B- Granted patents
- 55
- Published applications
- 73
- Assignees
- 59
- Inventors
- 180
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 6 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 2 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 6 |
| 2014 | 2 | 6 |
| 2015 | 2 | 7 |
| 2016 | 4 | 6 |
| 2017 | 3 | 9 |
| 2018 | 4 | 1 |
| 2019 | 3 | 1 |
| 2020 | 2 | 2 |
| 2021 | 3 | 6 |
| 2022 | 2 | 4 |
| 2023 | 3 | 7 |
| 2024 | 5 | 5 |
| 2025 | 3 | 6 |
| 2026 | 3 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device25 Aug 2026US 12,720,809 B2Semiconductor Energy Laboratory Co.Ltd.
- Nitride laminate and manufacturing method of the same18 Aug 2026US 12,713,843 B2Nitto Denko Corporation
- Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate24 Mar 2026US 12,588,323 B2Mie University
- Large-area single-crystal silver thin-film structure using single-crystal copper thin-film buffer layer and manufacturing method therefor12 Aug 2025US 12,386,108 B2Pusan National University Industry-University Cooperation Foundation
- Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film20 May 2025US 12,308,063 B2National Institute of Advanced Industrial Science and Technology
- Homoepitaxial thin film, manufacturing method and manufacturing apparatus thereof1 Jan 2026US 2026/0002284 A1Shincron Co., Ltd.
- Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate9 Oct 2025US 2025/0318325 A1Mie University
- P-type spinel structures as a p-n heteroepitaxial interface to b-ga2o328 Aug 2025US 2025/0275205 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Heaters and plasma generators for gas activation, and related chamber and for semiconductor manufacturing10 Jul 2025US 2025/0226186 A1APPLIED Materials.Inc.
- Production method for single crystal semiconductor film, production method for multilayer film of single crystal semiconductor film, and semiconductor element22 May 2025US 2025/0163606 A1Mach, Inc.
Most cited
By later US patents
- Process for formation of epitaxial film48US 5,849,163 ACanon Kabushiki Kaisha · 1998
- Method of depositing III-V compounds on group IV element wafers by the cluster ion technique23US 4,147,573 AFutaba Denshi Kogyo K. K. · 1979
- Process for the formation of a flux of atoms and its use in an atomic beam epitaxy process22US 4,664,940 A1987
- Apparatus for vapor depositing a stoichiometric compound21US 4,286,545 AFutaba Denshi Kogyo K. K. · 1981
- Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition17US 4,179,312 AInternational Business Machines Corporation · 1979